41107 ti im b8-8299,7644,7336 no.8776-1/5 LA6585M overview the LA6585M is single-phase bipolar fan motor is driven, through btl output linear drive, at high efficiency, low power, and low sound by suppressing the reactive power. lock protection, rotary signal circuits are incorporated, which is optimum for the notebook pc, consumer equipment power supply, car audio system, cpu cooler, etc. that require high reliability and low noise. functions and features ? pre-driver for single-phase full-wave drive ? single-phase full-wave linear drive by btl output (gain resistance 1k ? -360k ? , 51db) : no switching noise, which is optimum for equipment requiring silence, such as consumer equipment power supply, car audio system, etc. ? low-voltage operation possible, with wide operating voltage range (2.2 to 14.0v) ? low saturation output (upper + lower saturation voltage : v o sat (total) = 1.2vtyp, i o = 250ma) : high coil efficiency with low current drain. additionally, ic itself generates only small heat. ? built-in lock protection and automatic reset circuits ? built-in fg & rd outputs ? built-in hall bias (v hb = 1.5v) ? thermal protection circuit : when the large current flows due to output short-circuit an d the ic chip temperature ex ceeds 180c, this protective circuit suppresses the dr ive current to prevent burn and damage to ic. ? extra-small & high heat capacity package ordering number : en8776 monolithic digital ic for motor driver btl driver single-phase full-wave specifications of any and all sanyo semiconductor co.,l td. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' sproductsor equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general el ectronics equipment (home appliances, av equipment, communication device, office equipment, industrial equ ipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medica l equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, t ransportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of re liability and can directly threaten human lives in case of failure or malfunction of the product or may cause har m to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for app lications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is n o consultation or inquiry before the intended use, our customer shall be solely responsible for the use.
LA6585M no.8776-2/5 specifications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit supply voltage v cc max 15 v allowable power dissipation pd max mounted on a specified board* 800 mw output current i out max 0.7 a output withstand voltage v out max 15 v rd/fg output pin output withstand voltage v rd/fg max 15 v rd/fg output current i rd/fg max 10 ma hb output current i b max 10 ma operating temperature topr -30 to +90 c storage temperature tstg -55 to +150 c *: mounted on a specified board: 114.3mm 76.1mm 1.6mm glass epoxy operating conditions at ta = 25 c parameter symbol conditions ratings unit supply voltage v cc 2.2 to 14.0 v common-phase input voltage range of hall input v i cm 0 to v cc -1.5 v electrical characteristics at ta = 25 c, v cc = 12v, unless otherwise specified ratings parameter symbol conditions min typ max unit i cc 1 during drive (ct = l) 36 9ma circuit current i cc 2 during lock protection (ct = h) 2.5 5 7.5 ma lock detection capacitor charge current i ct 1 0.9 1.2 1.5 a capacitor discharge current i ct 2 0.10 0.18 0.25 a capacitor charge and discharge current ratio r ct rcd = i ct 1/i ct 2 56.5 8- ct charge voltage v ct 1 1.3 1.5 1.7 v ct discharge voltage v ct 2 0.3 0.5 0.7 v out output l saturation voltage v ol i o = 200ma 0.25 0.45 v out output h saturation voltage v oh i o = 200ma 0.95 1.2 v hall input sensitivity v hn zero peak value (including offset and hysteresis) 7 15 mv hall bias voltage v hb i hb = 5ma 1.3 1.5 1.7 v fg/rd output pin l voltage v fg/rd i rd/fg = 5ma 0.15 0.3 v fg/rd output pin leak current i fg/rdl v rd/fg = 15v 1 30 a truth table in- in+ ct out1 out2 fg rd mode h l h l l l h l l h h l during rotation - - h off off - h during overheat protection
LA6585M no.8776-3/5 package dimensions unit : mm (typ) 3086b block diagram sanyo : mfp10s(225mil) 1 10 5 6 (0.5) 1.7max 1.0 0.35 5.0 0.15 6.4 (1.5) 0.1 4.4 0.63 ila07116 0 200 1200 1000 600 400 120 -30 90 60 030 800 384 mounted on a specified board: 114.3mm 76.1mm 1.6mm, glass epoxy pd max - ta allowable power dissipation, pd max - mw ambient temperature, ta - c h 1.5vrg fg out1 out2 hb v cc in+ in- gnd discharge pulse control circuit charge discharge rd ct=0.47 to 1
LA6585M no.8776-4/5 pin assignment sample application circuit * 1: when the breakdown protective di at re verse connection is to be used, it is necessary to insert the capacitor cr to secure the regenerative current route. similarly, cr must be provided to enhance the reliability when there is no capacitor near the fan power line. * 2: to obtain hall bias from v cc , carry out bias to v cc with resister r2 as shown in the figure . linear driving is made through voltage control of the coil by amplifying the hall output. when the hall element output is large, the startup performance and efficiency ar e improved. adjustment of the hall el ement can reduce the noise further. * 3: to obtain hall bias from the hb pin, carry out constant-voltage bias at about 1.5v, which enables the hall element to generate the stable hall output satisfactory in temp erature characteristics. adju stment of the hall output amplitude is made with r1. (when v cc =12v, the step * 2 above proves advantageous for ic heat generation.) * 4: keep this open when not using. * 5: when the wiring from the hall output to ic hall input is long, noise may be carried through the wiring. in this case, insert the capacitor as shown in the figure. LA6585M gnd out1 ct hb in- rd fg in+ v cc out2 top view gnd v cc fg out1 out2 in+ in- hb *1 di cr *2 on board element h r2 h r1 *3 in+ in- hb *5 rd *4 ct
LA6585M no.8776-5/5 ps this catalog provides information as of april, 2007. specifications and info rmation herein are subject to change without notice. sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rate d values (such as maximum ra tings, operating condition ranges, or other parameters) listed in products specif ications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-qual ity high-reliability products, however, any and all semiconductor products fail or malfunction with some probabi lity. it is possible that these probabilistic failures or malfunction could give rise to acci dents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or e vents cannot occur. such measures include but are not limited to protective circuits and error prevention c ircuits for safe design, redundant design, and structural design. upon using the technical information or products descri bed herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable f or any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagr ams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equi pment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor c o.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities conc erned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any in formation storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd.
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